Oscillatory tunneling magnetoresistance in magnetic tunnel junctions with inserted nonmagnetic layer
نویسندگان
چکیده
منابع مشابه
Annealing effect on tunneling magnetoresistance in MgO-based magnetic tunnel junctions with FeMn exchange-bias layer
MgO-based magnetic tunnel junctions were fabricated, with a thin pinned CoFeB layer in the unbalanced synthetic antiferromagnet part of the stack FeMn/CoFe/Ru/CoFeB. Inverted and normal tunneling magnetoresistance (TMR) values occur at low and high annealing temperatures (Ta), respectively. The TMR ratio remains inverted up to Ta = 300 °C and it becomes normal around Ta = 350 °C. The exchange b...
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ژورنال
عنوان ژورنال: Physical Review B
سال: 2012
ISSN: 1098-0121,1550-235X
DOI: 10.1103/physrevb.86.134411